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JSD
INFI
CVD Single Crystal Diamond Properties:
Compared to other forms of synthetic diamond, single crystal diamond CVD has a highly ordered crystal structure, which gives it improved physical and mechanical properties. This makes it a desirable material for a range of high-performance applications, where its hardness and thermal conductivity are important factors.
Diamond material has the highest thermal conductivity among natural materials known so far. The thermal conductivity of artificial CVD single crystal diamond is similar to that of natural diamond (up to 2200W/(m K), which is 7.5 times that of AIN and 4.5 times that of SiC. At the same time, diamond has the characteristics of stable chemical properties, high insulation, and small dielectric constant. Based on these excellent properties, single crystal diamond is the first choice for the next generation of high-power, high-frequency and low-power electronic device applications Material.
Using the microwave plasma-assisted chemical vapor deposition method (MPACVD), the microwave resonance system is used to break down the carbon-containing gas and corrosive gas at low and medium pressures to generate plasma, and the growth strategy of the single-crystal diamond crystal model is designed, so that the diamond crystal can be used Homoepitaxial growth is achieved in the 100 and 110 and 111 growth directions of the type IIb diamond seed crystal,
Size Available:
Suggested application | diamond Sustrated/seeds for single crystal CVD growth |
Crystal growth process: | CVD |
Color: | Colorless |
Available size : | 3x3x0.3 4x4x0.3 5x5x0.3 6x6x0.3 7x7x0.3 8x8x0.3 9x9x0.6 10x10x0.3 11x11x0.3 12x12x0.3 13x13x0.3 15x15x0.3 |
Benefits: | The length, width and thickness are all positive tolerance, |
There are no polycrystalline black spots, cracks under the 20x magnifying glass. | |
The cutting is perfect without small missing corners. | |
The stress distribution is uniform under the polarizer. | |
Orientation: | 4pt/100 |
Lateral Dimensions Measured | to smaller side |
Edges | Laser Cut |
Edge Orientation | <100> edges |
Face Orientation | {100} faces |
Lateral Tolerance: | L + W tolerance (0, +0.3 mm), thickness tolerance (0, +0.1mm). |
Side 1, Roughness, Ra | Two sides polished, Ra < 20 nm One side polished, Unpolished |
Boron Concentration [B]: | <0.05 ppm |
Nitrogen Concentration: | < 20 ppm |
Picture details:
CVD Single Crystal Diamond Properties:
Compared to other forms of synthetic diamond, single crystal diamond CVD has a highly ordered crystal structure, which gives it improved physical and mechanical properties. This makes it a desirable material for a range of high-performance applications, where its hardness and thermal conductivity are important factors.
Diamond material has the highest thermal conductivity among natural materials known so far. The thermal conductivity of artificial CVD single crystal diamond is similar to that of natural diamond (up to 2200W/(m K), which is 7.5 times that of AIN and 4.5 times that of SiC. At the same time, diamond has the characteristics of stable chemical properties, high insulation, and small dielectric constant. Based on these excellent properties, single crystal diamond is the first choice for the next generation of high-power, high-frequency and low-power electronic device applications Material.
Using the microwave plasma-assisted chemical vapor deposition method (MPACVD), the microwave resonance system is used to break down the carbon-containing gas and corrosive gas at low and medium pressures to generate plasma, and the growth strategy of the single-crystal diamond crystal model is designed, so that the diamond crystal can be used Homoepitaxial growth is achieved in the 100 and 110 and 111 growth directions of the type IIb diamond seed crystal,
Size Available:
Suggested application | diamond Sustrated/seeds for single crystal CVD growth |
Crystal growth process: | CVD |
Color: | Colorless |
Available size : | 3x3x0.3 4x4x0.3 5x5x0.3 6x6x0.3 7x7x0.3 8x8x0.3 9x9x0.6 10x10x0.3 11x11x0.3 12x12x0.3 13x13x0.3 15x15x0.3 |
Benefits: | The length, width and thickness are all positive tolerance, |
There are no polycrystalline black spots, cracks under the 20x magnifying glass. | |
The cutting is perfect without small missing corners. | |
The stress distribution is uniform under the polarizer. | |
Orientation: | 4pt/100 |
Lateral Dimensions Measured | to smaller side |
Edges | Laser Cut |
Edge Orientation | <100> edges |
Face Orientation | {100} faces |
Lateral Tolerance: | L + W tolerance (0, +0.3 mm), thickness tolerance (0, +0.1mm). |
Side 1, Roughness, Ra | Two sides polished, Ra < 20 nm One side polished, Unpolished |
Boron Concentration [B]: | <0.05 ppm |
Nitrogen Concentration: | < 20 ppm |
Picture details: