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Thermal cvd
Suggested application | RF Power Devices |
Power Semiconductors | |
High Speed Processors | |
Radar Amplifiers | |
High powered laser diode arrays | |
LEDs | |
Multi-chip power module packages | |
Flip chip | |
Benefits: | Designed thermal conductivities ranging from 1,000 W/ mK to over 2,000 W/ mK Electrically insulating and good mechanical strength Low weight, toxicity and dielectric constant Available as a polycrystalline CVD diamond material |
Crystal growth process: | single crystal CVD |
Color: | Light brown, Colorless |
Orientation: | 4pt/100 |
Size range: | 2-9 mm (single crystal CVD diamond), Thickness: 0.05-3mm, |
Lateral Tolerance: | +0.1/-0 mm |
Side 1, Roughness, Ra | polished, Ra <30 nm |
Side 2, Roughness, Ra | polished, Ra <30 nm |
Thickness Tolerance | +/- 0.05 mm |
Thermal conductivities | 1,500-2200 W / mK |
Bulk Resistivity (Rv): | 1x1012 Ohm cm |
Surface Resistivity (Rs): | 1x1010 Ohm cm |
Thermal Diffusivity: | >5.5 @ 300 K (cm2s-1) |
Suggested application | RF Power Devices |
Power Semiconductors | |
High Speed Processors | |
Radar Amplifiers | |
High powered laser diode arrays | |
LEDs | |
Multi-chip power module packages | |
Flip chip | |
Benefits: | Designed thermal conductivities ranging from 1,000 W/ mK to over 2,000 W/ mK Electrically insulating and good mechanical strength Low weight, toxicity and dielectric constant Available as a polycrystalline CVD diamond material |
Crystal growth process: | single crystal CVD |
Color: | Light brown, Colorless |
Orientation: | 4pt/100 |
Size range: | 2-9 mm (single crystal CVD diamond), Thickness: 0.05-3mm, |
Lateral Tolerance: | +0.1/-0 mm |
Side 1, Roughness, Ra | polished, Ra <30 nm |
Side 2, Roughness, Ra | polished, Ra <30 nm |
Thickness Tolerance | +/- 0.05 mm |
Thermal conductivities | 1,500-2200 W / mK |
Bulk Resistivity (Rv): | 1x1012 Ohm cm |
Surface Resistivity (Rs): | 1x1010 Ohm cm |
Thermal Diffusivity: | >5.5 @ 300 K (cm2s-1) |